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1N457/A
?2002 Fairchild Semiconductor Corporation
1N457/A, Rev. A
1N457/A
Small Signal Diode
Absolute Maximum Ratings*
TA
= 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
DO-35
Color Band Denotes Cathode
Electrical Characteristics
TA
= 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VRRM
Maximum Repetitive Reverse Voltage 70 V
IF(AV)
Average Rectified Forward Current 200 mA
IFSM
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
1.0
4.0
A
A
Tstg
Storage Temperature Range -65 to +200
°C
TJ
Operating Junction Temperature 175
°C
Symbol
Parameter
Value
Units
PD
Power Dissipation 500 mW
RθJA
Thermal Resistance, Junction to Ambient 300
°C/W
Symbol
Parameter
Test Conditions
Min
Max
Units
VR
Breakdown Voltage
IR
= 100
μA
70 V
VF
Forward Voltage
1N457
1N457A
IF
= 20 mA
IF
= 100 mA
1.0
V
1.0
V
IR
Reverse Current V
R
= 60 V
VR
= 60 V, T
A
= 150
°C
5
μA
25
nA
CT
Total Capacitance
1N457
V
R
= 0, f
= 1.0 MHz 8.0 pF
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